Great progress has been made in the research of ultra-high mobility p-type CdS nanowire photovoltaic devices

Cadmium sulfide (CdS) is a crucial II-VI direct bandgap semiconductor with a bandgap of approximately 2.42 eV at room temperature. Known for its outstanding electrical and optical properties, CdS holds significant potential in various optoelectronic and functional devices. However, achieving stable p-type doping through conventional impurity implantation has been challenging due to the self-compensation effect, which has significantly limited the development and application of CdS-based optoelectronic devices. Recently, a research team led by Prof. Luo Linbao from the School of Electronic Science and Applied Physics at our university, in collaboration with Professor Yu Shuhong's laboratory at the University of Science and Technology of China, introduced a groundbreaking surface charge transfer doping technique. By wrapping CdS nanowires with a thin layer of MoO3, they successfully achieved p-type doping. Electrical characterization of field-effect transistors based on single nanowires revealed that the resulting CdS nanowires exhibit extremely high hole mobility, and their conductance can be effectively controlled by adjusting the thickness of the surface dopant. Moreover, the team designed and fabricated a high-performance single CdS nanowire homojunction photovoltaic device. These findings were published in *Advanced Energy Materials* (Adv. Energy Mater. 2013, 5, 579–583), and the study quickly gained attention from international media such as *Materials Views (China)*, which featured the work under the title “Ultra-high-mobility p-type CdS nanowires: Surface Charge Transfer Doping and Its Photovoltaic Devices.” In addition, the research group also developed a high-performance Schottky junction UV detector using a single-layer graphene-zinc oxide nanorod array. This unique structure demonstrated exceptional optical performance. Due to the ultra-thin nature of graphene, ultraviolet light passes through it almost without loss, reaching the top of the zinc oxide nanorod array. Furthermore, finite element optical simulations showed that the incident light creates a strong electric field distribution at the top of the zinc oxide, enhancing the generation of minority carriers within the material. Under reverse bias, these carriers quickly drift across the Schottky junction, forming a strong photocurrent. This innovation overcomes the limitations caused by the surface carrier depletion layer in one-dimensional nanostructures, leading to faster detection speeds. The study provides a solid theoretical and experimental foundation for the development of next-generation high-performance UV photodetectors. The results were published in *Small* [DOI: 10.1002/smll.201203188].

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