Cadmium sulfide (CdS) is a significant II–VI direct bandgap semiconductor with a bandgap of 2.42 eV at room temperature. Its remarkable electrical and optical properties make it a promising material for various optoelectronic and functional devices. However, the self-compensation effect has long hindered the achievement of stable p-type CdS using conventional doping methods, which has significantly limited the development and application of CdS-based optoelectronic devices.
Recently, a research team led by Professor Luo Linbao from our university's School of Electronic Science and Applied Physics, in collaboration with Professor Yu Shuhong’s laboratory at the University of Science and Technology of China, introduced a novel surface charge transfer doping technique. By wrapping a thin MoO₃ layer around CdS nanowires, they successfully achieved p-type doping. Electrical characterization of field-effect transistors based on single nanowires revealed extremely high hole mobility, with conductance controllable by adjusting the thickness of the surface dopant. Moreover, they designed and fabricated a high-performance single CdS nanowire homojunction photovoltaic device. These findings were published in *Advanced Energy Materials* (Adv. Energy Mater. 2013, 5, 579–583), and the work quickly attracted attention from leading academic media such as *Materials Views (China)*, which highlighted the study under the title “Ultra-high-mobility p-type CdS nanowires: surface charge transfer doping and its photovoltaic devices.â€
In addition, the same research group also developed a high-performance single-layer graphene/zinc oxide nanorod array Schottky junction UV detector. The unique structure of this device exhibits excellent optical properties. Due to the negligible thickness of graphene, ultraviolet light passes through the graphene layer with minimal loss and reaches the top of the zinc oxide nanorod array. Furthermore, finite element optical simulations showed that the incident light energy concentrates at the top of the zinc oxide, creating a strong electric field that enhances the generation of photogenerated minority carriers. Under reverse bias, these carriers rapidly drift across the Schottky junction, producing a strong photocurrent. This breakthrough overcomes the limitations caused by the carrier depletion layer in one-dimensional nanostructures, enabling faster detection speeds. The study provides a solid theoretical and experimental foundation for the development of next-generation UV photodetectors. The results were published in *Small* [DOI: 10.1002/smll.201203188].
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